Capacitance - Voltage characteristics of p - n structures based on (111)Si doped with erbium and oxygen

Semiconductors

Volumn 35, Issue 3, 2001, Pages 316-320

  Emel'yanov, A M ^a   Sobolev, N A ^a   Yakimenko, A N ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035285571     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1356154     Document Type: Article

References (11)

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3. A. M. Emel'yanov, N. A. Sobolev, P. E. Khakuashev, and M. A. Trishenkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 965 (2000) [Semiconductors 34, 927 (2000)].
4. N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1069 (2000) [Semiconductors 34, 1027 (2000)].
5. N. A. Sobolev, A. M. Emel'yanov, and Yu. A. Nikolaev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1069 (2000) [Semiconductors 34, 1027 (2000)].
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7. A. M. Emel'yanov, N. A. Sobolev, and A. N. Yakimenko, Appl. Phys. Lett. 72, 1223 (1998).
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9. N. A. Sobolev, A. M. Emel'yanov, Yu. A. Nikolaev, and V. I. Vdovin, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 660 (1999) [Semiconductors 33, 613 (1999)].
10. N. A. Sobolev, Yu. A. Nikolaev, A. M. Emel'yanov, et al., J. Lumin. 80, 315 (1998).
11. J. Bourgoin and M. Lanoo, Point Defects in Semiconductors (Springer-Verlag, New York, 1983; Mir, Moscow, 1985).