Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions

Vacuum

Volumn 78, Issue 2-4, 2005, Pages 627-630

  Stano J ^a,b   Skuratov, V A ^b   Ziska M ^c   Kovac P ^a  

^a Cyclotron Centre of Slovak Republic   (Slovakia)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

High energy heavy ions; MOS structure; Q DLTS; Radiation damage; Thermal spike model

Indexed keywords

ARGON; BISMUTH; CAPACITANCE; ELECTRIC POTENTIAL; ENERGY DISSIPATION; HARDNESS; HEAT TREATMENT; HEAVY IONS; IRRADIATION; KRYPTON; MATHEMATICAL MODELS; RADIATION DAMAGE;

CHARGE DEEP LEVEL TRANSIENT SPECTROSCOPY (Q-DLTS); HIGH-ENERGY HEAVY IONS; METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURE; THERMAL-SPIKE MODELS;

MOS DEVICES;

EID: 18544364209     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2005.01.098     Document Type: Conference Paper

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