Irradiation-induced deep levels in silicon for power device tailoring

Journal of the Electrochemical Society

Volumn 153, Issue 2, 2006, Pages

  Siemieniec, R ^a   Niedernostheide, F J ^b   Schulze, H J ^b   Sudkamp W ^c   Kellner Werdehausen, U ^b   Lutz, J ^d  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c Aktiv Sensor GmbH   (Germany)

^d CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRANSITIONS; HELIUM; POWDER COATINGS; SILICON; TEMPERATURE MEASUREMENT;

ELECTRICAL CHARACTERISTICS; HELIUM IONS; HIGH-VOLTAGE POWER DEVICES; POWDER LEVEL TAILORING;

IRRADIATION;

EID: 30644465737     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2137649     Document Type: Article

References (63)

1. F. Robb, I. Wau, and S. Ju, in Proceedings ISPSD, p. 251, Weimar, (1997).
2. T. Nakagawa, K. Satoh, M. Yamamoto, K. Hirasawa, and K. Ohta, in Proceedings ISPSD, p. 175, Yokohama, (1995).
3. J. Lutz, in Proceedings EPE, p. 1502, Trondheim, (1997).
4. N. Kaminski, N. Galster, S. Linder, C. Ng, and R. Francis, in Proceedings EPE, Lausanne, (1999).
5. W. Wondrak, Ph.D. Thesis, University of Frankfurt/M., Frankfurt/M. (1985).
6. P. Voss, German Pat. DE2817160 (1989).
7. H. Iwamoto, H. Haruguchi, Y. Tomomatsu, J. F. Donlon, and E. R. Motto, in Proceedings IAS, p. 692, Phoenix, (1999).
8. M. Rüb, M. Bär, F.-J. Niedernostheide, M. Schmitt, H.-J. Schulze, and A. Willmeroth, in Proceedings ISPSD'04, p. 181, Kitakyushu, (2004).
9. M. Schmitt, H.-J. Schulze, A. Schlögl, M. Vossebürger, A. Willmeroth, G. Deboy, and G. Wachutka, in Proceedings ISPSD, p. 229, Santa Fe, (2002).
10. M. Takei, T. Naito, and K. Ueno, in Proceedings ISPSD, p. 156, Cambridge, (2003).
11. R. Siemieniec, R. Herzer, M. Netzel, and J. Lutz, in Proceedings MIEL, p. 167, Nis, (2004).
12. H.-J. Schulze and H. Mitlehner, in Proceedings EPE-MADEP, p. 393, Florence, (1991).
13. F.-J. Niedernostheide, M. Schmitt, H.-J. Schulze, U. Kellner-Werdehausen, A. Frohnmeyer, and G. Wachutka, J. Electrochem. Soc., 150, G15 (2003).
14. W. Shockley and W. T. Read, Phys. Rev., 87, 835 (1952).
15. D. V. Lang, J. Appl. Phys., 45, 3023 (1974).
16. S. R. Lederhandler and L. J. Giacoletto, Proc. IRE, 1955, 477 (1955).
17. R. G. Mazur and D. H. Dickey, J. Electrochem. Soc., 113, 255 (1966).
18. S. C. Jain and R. Muralidharan, Solid-State Electron., 24, 1147 (1981).
19. R. J. Basset, W. Fulop, and C. A. Hogarth, Int. J. Electron., 35, 177 (1973).
20. M. A. Green, Solid-State Electron., 26, 1117 (1983).
21. V. Grivickas, Solid State Commun., 108, 561 (1998).
22. S. Gall, Ph.D. Thesis, TU Berlin (1997).
23. JOL-R60-Gütegeschalteter diodengepumpter Festkörperlaser, Spezifikation, JENOPTIK Geschäftsbereich Lasertechnik, Jena.
24. L. C. Kimerling, H. M. Angelis, and J. Diebold, Solid State Commun., 16, 171 (1975).
25. Y. H. Lee, L. J. Cheng, and J. D. Gerson, Solid State Commun., 21, 109 (1977).
26. S. K. Bains and P. C. Branbury, J. Phys. C, 18, L109 (1985).
27. H. Bleichner, P. Jonsson, N. Keskitalo, and E. Nordlander, J. Appl. Phys., 79, 9142 (1996).
28. S. D. Brotherton and P. Bradley, J. Appl. Phys., 53, 5720 (1982).
29. P. G. Fuochi, E. Gombia, R. Mosca, F. Fasce, M. Icardi, M. Portesine, and P. Rossetto, in Proceedings EPE-MADEP, p. 80, Firenze, (1991).
30. C. A. Londos, Phys. Status Solidi A, 113, 503 (1989).
31. C. A. Londos and P. C. Branbury, J. Phys. C, 20, 645 (1987).
32. B. G. Svenson and M. Willander, J. Appl. Phys., 62, 2758 (1987).
33. G. Ferenci, C. A. Londos, T. Pavelka, and M. Somogyi, J. Appl. Phys., 63, 183 (1988).
34. A. Halĺn, N. Keskatilo, F. Masszi, and V. Nagl, J. Appl. Phys., 79, 3906 (1996).
35. P. Hazdra and J. Vobecký, Solid-State Electron., 37, 127 (1994).
36. M. W. Hüppi, Ph.D. Thesis, ETH Zürich, Zürich (1989).
37. K. Irmscher, Ph.D. Thesis, Humboldt-Universität, Berlin (1985).
38. N. Keskitalo, Ph.D. Thesis, Uppsala University, Uppsala (1997).
39. W. Südkamp, Ph.D. Thesis, TU Berlin, Berlin (1994).
40. J. R. Troxell, Solid-State Electron., 26, 539 (1983).
41. J. Vobecký, P. Hazdra, and J. Homola, IEEE Trans. Electron Devices, 43, 2283 (1996).
42. R. Siemieniec, W. Südkamp, and J. Lutz, Solid-State Electron., 46, 891 (2002).
43. R. Siemieniec, W. Südkamp, and J. Lutz, in Proceedings ICCDCS, Aruba, (2002).
44. H.-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tütto, T. Pavelka, and G. Wachutka, J. Electrochem. Soc., 148, G655 (2001).
45. R. Siemieniec, W. Südkamp, J. Lutz, and M. Netzel, in Proceedings IETA, Cairo, (2001).
46. J. Lutz, W. Südkamp, and W. Gerlach, Solid-State Electron., 42, 931 (1998).
47. R. Siemieniec, J. Lutz, and R. Herzer, IEE Proc.-G: Circuits, Devices Syst., 151, 219 (2004).
48. R. Siemieniec, M. Netzel, J. Lutz, and P. Mourick, in Proceedings EPE, Toulouse, (2003).
49. E. V. Monakhov, B. S. Avset, A. Hallen, and B. G. Svensson, Phys. Rev. B, 65, 233207 (2002).
50. J. Guldberg, Appl. Phys. Lett., 31, 578 (1977).
51. P. Hazdra, J. Rubeš, and J. Vobecký, Nucl. Instrum. Methods Phys. Res. B, 159, 207 (1999).
52. I. Dudeck and R. Kassing, J. Appl. Phys., 48, 4786 (1977).
53. K. Gill, G. Hall, and B. MacEvoy, J. Appl. Phys., 82, 126 (1997).
54. H. Gajewski, B. Heinemann, and H. Langmach, TeSCA-Handbuch, Weierstrass-Institute for Applied Analysis and Stochastics, Berlin (1991).
55. G. K. Wertheim, Phys. Rev., 100, 1086 (1958).
56. V. F. Stas', I. V. Antonova, E. P. Neustroev, V. P. Popov, and L. S. Smirnov, Semiconductors, 34, 155 (2000).
57. R. C. Newman, M. J. Ashwin, R. E. Pritchard, and J. H. Tucker, Phys. Status Solidi B, 210, 519 (1998).
58. V. P. Markevich, T. Mchedlidze, M. Suezawa, and L. I. Murin, Phys. Status Solidi B, 210, 545 (1998).
59. J. Coutinho, R. Jones, P. R. Briddon, S. Öberg, L. I. Murin, V. P. Markevich, and J. L. Lindström, Phys. Rev. B, 65, 014109 (2001).
60. J. Hartung and J. Weber, Phys. Rev. B, 48, 14161 (1993).
61. H.-J. Schulze, F.-J. Niedernostheide, M. Schmitt, U. Kellner-Werdehausen, and G. Wachutka, in High Purity Silicon VII, C. L. Claeys, M. Watanabe, P. Rai-Choudhury, and, P. Stallhofer, Eds., PV 2002-20, p. 320, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
62. F.-J. Niedernostheide, H.-J. Schulze, U. Kellner-Werdehausen, R. Barthelmess, J. Przybilla, R. Keller, H. Schoof, and D. Pikorz, in Proceedings ISPSD'03, p. 122, Cambridge, (2003).
63. F.-J. Niedernostheide, H.-J. Schulze, U. Kellner-Werdehausen, and C. Schneider, in Proceedings EPE, Dresden, (2005).