Production and loss mechanisms of SiCl3.25 etch products during silicon etching in a high density HBr/Cl2/O2 plasma

Journal of Applied Physics

Volumn 96, Issue 8, 2004, Pages 4578-4587

  Cunge, G ^a   Kogelschatz, M ^b   Sadeghi, N ^b  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL REACTORS; CONCENTRATION (PROCESS); DISSOCIATION; ELECTRONS; IMPACT IONIZATION; MASS SPECTROMETRY; PLASMAS; PROBABILITY; SILICON WAFERS; ULTRAVIOLET RADIATION;

ELECTRON IMPACT DISSOCIATION; ETCH RATE; REACTOR WALLS; ULTRAVIOLET ABSORPTION SPECTROSCOPY;

ETCHING;

EID: 7544230698     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1786338     Document Type: Article

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