Analysis of the chemical composition and deposition mechanism of the SiOx-Cly layer on the plasma chamber walls during silicon gate etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 3, 2004, Pages 624-635

  Kogelschatz, Martin ^a   Cunge, Gilles ^b   Sadeghi, Nader ^a  

^a UNIV GRENOBLE ALPES   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CHLORINE; COMPOSITION EFFECTS; DEPOSITION; ETCHING; GATES (TRANSISTOR); MASS SPECTROMETRY; PLASMAS;

DEPOSITION MECHANISMS; FILM DEPOSITION; GAS PHASE; PLASMA CHAMBERS;

SILICA;

EID: 3142552576     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1710496     Document Type: Article

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