Impact of chemistry on profile control of resist masked silicon gates etched in high density halogen-based plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2174-2183

  Detter, X ^a   Palla, R ^a   Thomas Boutherin, I ^a   Paragon, E ^b   Cunge, G ^b   Joubert, O ^b   Vallier, L ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPOSITION; ETCHING; MASKS; MASS SPECTROMETRY; MIXTURES; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

CRITICAL DIMENSION; HIGH DENSITY HALOGEN; SILICON GATE ETCHING;

SEMICONDUCTING SILICON;

EID: 0242509075     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1612932     Document Type: Article

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