Plasma reactor dry cleaning strategy after TaC, MoN, WSi, W, and WN etching processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 113-121

  Ramos, R ^a,b   Cunge, G ^b   Joubert, O ^b   Lill, T ^c  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b CEA LETI   (France)

^c APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLEANING STRATEGIES; CRITICAL ISSUES; ETCHING CHAMBERS; ETCHING PROCESS; HIGH - K DIELECTRICS; IN-SITU; INDUCTIVELY COUPLED PLASMA REACTORS; METAL GATE STACKS; METAL/HIGH-K GATES; PLASMA CHEMISTRIES; PLASMA ETCHING PROCESS; PLASMA REACTORS; REACTOR WALLS; REPRODUCIBILITY;

CHEMISTRY; CHLORINE; CLEANING; COUPLED CIRCUITS; DRY CLEANING; ETCHING; FLUORINE; HAFNIUM; HAFNIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; LOGIC GATES; METAL CLEANING; MOLYBDENUM; OZONE WATER TREATMENT; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; PLASMA ETCHING; PLASMAS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TANTALUM; TANTALUM COMPOUNDS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

DRY ETCHING;

EID: 59949097945     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3058710     Document Type: Article

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