Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 181-188

  Ramos, R ^a,b   Cunge, G ^b   Joubert, O ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COATINGS; HAFNIUM COMPOUNDS; LITHOGRAPHY; POLYSILICON; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE STACK PATTERNING; METAL OXIDE; PLASMA CHEMISTRY; WAFER-TO-WAFER REPRODUCIBILITY;

REACTIVE ION ETCHING;

EID: 38849205753     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2830637     Document Type: Article

References (50)

1. E. Pargon, M. Darnon, O. Joubert, T. Chevolleau, L. Vallier, L. Mollard, and T. Lill, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2008272 23, 1913 (2005).
2. X. Detter, R. Palla, I. Thomas-Boutherin, E. Pargon, G. Cunge, O. Joubert, and L. Vallier, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1612932 21, 2174 (2003).
3. S. J. Ullal, S. Gangadharan, E. A. Edelberg, J. Daugherty, H. Singh, V. Vahedi, A. R. Godfrey, and E. S. Aydil (http://www.avsusergroups.org/peug_pdfs/ PEUG_05_2003_Talk.pdf).
4. S. Xu, T. Lill, and D. Podlesnik, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1412655 19, 2893 (2001).
5. G. Cunge, O. Joubert, and N. Sadeghi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1619575 94, 6285 (2003).
6. S. J. Ullal, A. R. Godfrey, E. A. Edelberg, L. B. Braly, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1421602 20, 43 (2002).
7. G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2803880 102, 093304 (2007).
8. G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2803881 102, 093305 (2007).
9. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.580982 16, 270 (1998).
10. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369423 85, 74 (1999).
11. G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.581582 17, 282 (1999).
12. P. F. Kurunczi, J. Guha, and V. M. Donnelly, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.018306 96, 018306 (2006).
13. J. Guha, Y.-K. Pu, and V. M. Donnelly, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.2699167 25, 347 (2007).
14. G. Cunge, M. Kogelschatz, and N. Sadeghi, Plasma Sources Sci. Technol. PSTEEU 0963-0252 10.1088/0963-0252/13/3/019 13, 522 (2004).
15. G. Cunge, M. Kogelschatz, and N. Sadeghi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1786338 96, 4578 (2004).
16. G. Cunge, M. Kogelschatz, O. Joubert, and N. Sadeghi, Plasma Sources Sci. Technol. PSTEEU 0963-0252 10.1088/0963-0252/14/2/S06 14, S42 (2005).
17. G. Cunge, M. Mori, M. Kogelschatz, and N. Sadeghi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2171768 88, 051501 (2006).
18. M. Kogelschatz, G. Cunge, O. Joubert, L. Vallier, and N. Sadeghi, Contrib. Plasma Phys. CPPHEP 0863-1042 44, 425 (2004).
19. S. Xu, Z. Sun, X. Qian, J. Holland, and D. Podlesnik, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1330266 19, 166 (2001).
20. S. J. Ullal, T. W. Kim, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1562176 21, 589 (2003).
21. M. V. Malyshev, V. M. Donnelly, A. Kornblit, and N. A. Ciampa, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368010 84, 137 (1998).
22. B. C. Richardson and D. Outka, US Patent No. 6,350,697 (26 February 2002).
23. S. J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1479733 20, 1195 (2002).
24. O. Joubert, G. Cunge, B. Pelissier, L. Vallier, M. Kogelschatz, and E. Pargon, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1697484 22, 553 (2004).
25. R. Ramos, G. Cunge, O. Joubert, N. Sadeghi, M. Mori, and L. Vallier, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2006.10.025 515, 4846 (2007).
26. G. Cunge, B. Pelissier, O. Joubert, R. Ramos, and C. Maurice, Plasma Sources Sci. Technol. PSTEEU 0963-0252 10.1088/0963-0252/14/3/025 14, 599 (2005).
27. A. R. Godfrey, S. J. Ullal, L. B. Braly, E. A. Edelberg, V. Vahedi, and E. S. Aydil, Rev. Sci. Instrum. RSINAK 0034-6748 10.1063/1.1382638 72, 3260 (2001).
28. M. Kogelschatz, G. Cunge, and N. Sadeghi, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1710496 22, 624 (2004).
29. A. Le Gouil, E. Pargon, G. Cunge, O. Joubert, and B. Pelissier, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.2232417 24, 2191 (2006).
30. C. Ren, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1947901 87, 073506 (2005).
31. S. Ma, M. Jain, and J. D. Chinn, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.581165 16, 1440 (1998).
32. NIST electron inelastic mean free path database (http://www.nist.gov/srd/ nist71.htm).
33. J. A. Britten, H. T. Nguyen, S. F. Falabella, B. W. Shore, M. D. Perry, and D. H. Raguin, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.580256 14, 2973 (1996).
34. A. Le Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, and I. Matko, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2732736 25, 767 (2007).
35. R. Ramos, G. Cunge, B. Pelissier, and O. Joubert, Plasma Sources Sci. Technol. PSTEEU 0963-0252 10.1088/0963-0252/16/4/004 16, 711 (2007).
36. J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, and H. Iwai, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1612517 21, 2163 (2003).
37. G. Cunge, R. L. Inglebert, O. Joubert, L. Vallier, and N. Sadeghi, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1511219 20, 2137 (2002).
38. S. J. Ullal, H. Singh, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1450578 20, 499 (2002).
39. S. J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.1502698 20, 1939 (2002).
40. G. C. H. Zau and H. H. Sawin, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2069179 139, 250 (1992).
41. R. Hellriegel, M. Albert, B. Hintze, H. Winzig, and J. W. Bartha, Microelectron. Eng. MIENEF 0167-9317 84, 37 (2007).
42. S. Norasetthekul, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/S0169- 4332(01)00792-9 187, 75 (2002).
43. M. H́lot, T. Chevolleau, L. Vallier, O. Joubert, E. Blanquet, A. Pisch, P. Mangiagalli, and T. Lill, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.2134707 24, 30 (2006).
44. E. Sungauer, E. Pargon, X. Mellhaoui, R. Ramos, G. Cunge, L. Vallier, O. Joubert, and T. Lill, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2781550 25, 1640 (2007).
45. P. C. Nallan, G. Jin, and A. Kumar, US Patent No. 7,217,665 (15 May 2007).
46. L. Sha and J. P. Chang, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.1627771 22, 88 (2004).
47. L. Sha, R. Puthenkovilakam, Y.-S. Lin, and J. P. Chang, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.1627333 21, 2420 (2003).
48. D. P. Kim, J. W. Yeo, and C. Kim, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2003.12.113 459, 122 (2004).
49. P. N. Nitescu and H. H. Nguyen, US Patent No. 5,641,375 (24 June 1997).
50. V. Bliznetsov, R. Kumar, L. K. Bera, L. W. Yip, A. Du, and T. E. Hui, Thin Solid Films THSFAP 0040-6090 504, 140 (2006).