Ion flux composition in HBr/Cl2/O2 and HBr/Cl2/O2/CF4 chemistries during silicon etching in industrial high-density plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 2137-2148

  Cunge, G ^a   Inglebert, R L ^a   Joubert, O ^a   Vallier, L ^a   Sadeghi, N ^b  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; COMPOSITION; GATES (TRANSISTOR); HYDROGEN INORGANIC COMPOUNDS; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MASS SPECTROMETRY; ORGANIC COMPOUNDS; OXYGEN; PLASMA DENSITY; POSITIVE IONS; SILICON WAFERS;

HIGH DENSITY PLASMAS; ION FLUX COMPOSITION; PLASMA CHEMISTRIES; SILICON ETCHING;

PLASMA ETCHING;

EID: 0036026394     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1511219     Document Type: Article

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