Silicon quantum dots growth in sinx dielectric: A review

Nano

Volumn 4, Issue 5, 2009, Pages 265-279

  Panchal, A K ^a   Rai, D K ^a   Mathew, M ^a   Solanki, C S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

C V; FTIR; I V; MIS structure; PL; Si QD; SIMS; SiNx; TEM; XRD

Indexed keywords

CAPACITANCE VOLTAGE; CHARGE CONDUCTION; CHEMICAL COMPOSITIONAL ANALYSIS; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC MATRIXES; ELECTRICAL CHARACTERIZATION; FABRICATION TECHNIQUE; FTIR; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; OPTIMIZED DEPOSITION CONDITIONS; SECONDARY ION MASS SPECTROSCOPY; SILICON DIOXIDE; SILICON QUANTUM DOTS; STRUCTURAL CHARACTERISTICS; TEM; XRD;

FOURIER TRANSFORM INFRARED SPECTROSCOPY; METAL INSULATOR BOUNDARIES; MIS DEVICES; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SILICA; SILICON; SILICON NITRIDE; SILICON OXIDES; SPECTRUM ANALYSIS; SWITCHING CIRCUITS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77949440954     PISSN: 17932920     EISSN: None     Source Type: Journal    
DOI: 10.1142/S1793292009001770     Document Type: Article

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