Post deposition annealing temperature effect on silicon quantum dots embedded in silicon nitride dielectric multilayer prepared by hot-wire chemical vapor deposition

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3488-3491

  Panchal, A K ^a   Solanki, C S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Photoluminescence; Raman analysis; Si QD SiNx multilayer

Indexed keywords

A DENSITIES; A-SI:H; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; CONFOCAL MICRO-RAMAN; CRYSTALLINE PHASE; DEPOSITION CHAMBERS; DIELECTRIC MULTILAYERS; FILM STRUCTURES; HIGH-RESOLUTION TEM; HOT-WIRE CHEMICAL VAPOR DEPOSITIONS; LINE-SHIFTING; MICRO-RAMAN ANALYSIS; PEAK SHIFTING; PL SPECTRUM; POST-DEPOSITION ANNEALING; RAMAN ANALYSIS; SI QUANTUM DOTS; SI-QD/SINX MULTILAYER; SILICON QUANTUM DOTS; TEM; TEMPERATURE RANGES; TRANSMISSION ELECTRON MICROSCOPES;

AGGLOMERATION; ANNEALING; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; FILM PREPARATION; MULTILAYERS; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON NITRIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; WIRE;

AMORPHOUS SILICON;

EID: 64349101084     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.080     Document Type: Article

References (22)

1. Canham L.T. Appl. Phys. Lett. 57 (1990) 1046
2. Shockley W., and Queisser H.J. J. Appl. Phys. 32 (1961) 510
3. Nozik A.J. Physica, E 14 (2002) 115
4. Green M.A. Third Generation Photovoltaics (2001), Bridge Printery, Sydney
5. Miyazaki S., and Hirose M. In: Kanicki J. (Ed). Amorphous and Microcrystalline Semiconductor Devices: Optoelectronic Devices, Artech House, Boston (1991) 187
6. Cho E.C., Park S.W., Hao X.J., Song D., Huang S., Cho Y.H., Conibeer G., Park S.C., and Green M.A. Proceeding of 22nd European Photovoltaic Solar Energy Conference, Milan, Italy (September 3-7 2007) 169
7. Scardera G., Puzzer T., McGrouther D., Pink E., Fangsuwannarak T., Conibeer G., and Green M.A. The 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion vol. 1 (2006) 122
8. Conibeer G., Green M., Corkish R., Cho Y., Cho E.C., Jaing C.W., Fangsuwannarak T., Pink E., Huang Y., Puzzer T., Trupke T., Richards B., Shalav A., and Lin K.L. Thin Solid Films 511/512 (2006) 654
9. Maoutinho H.R., To B., Jiang C.S., Xu Y., Nelson B.P., Teplin C.W., and Jones K.M. J. Vac. Sci. Technol., A 24 1 (2006) 95
10. Vivas Hernandez A., Torchynska T.V., Matsumuto Y., Jimenez Sandoval S., Dybiec M., Ostapenko S., and Shcherbina L.V. Microelectron. J. 36 (2005) 510
11. Wong T.C., and Wu J.J. Mater. Res. Soc. Symp. Proc. 715 (2002) A8.2.1
12. Zhu J., Leach W.T., Stanley S.K., Ekerdt J.G., and Yan X. J. Appl. Phys. 92-8 (2002) 4695
13. Quintos Vasques A.L., Torchynska T.V., Polupan G., Matsumoto Y., Khomenkova L., and Shcherbyna L.V. Solid State Phenom. 131-133 (2008) 71
14. Cho E.C., Green M.A., Conibeer G., Song D., Cho Y.H., Scardera G., Huang S., Park S., Hao X.J., Huang Y., and Dao L.V. Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells, Advances in Optoelectronics by Hindawi Publishing Corporation (2007) 1 Article ID 69578
15. Hao H.L., Wu L.K., Shen W.Z., and Dekkers H.F.W. Appl. Phys. Lett. 91 (2007) 201922
16. Volodin V.A., Efremov M.D., and Gritsenko V.A. Solid State Phenom. 57-58 (1997) 501
17. Mishra P., and Jain K.P. Phys. Rev., B 64 (2001) 073304
18. Torrison L., Tolle J., Smith D.J., Poweleit C., Menedez J., Mitan M.M., Alford T.L., and Kouvetakis J. J. Appl. Phys. 92-12 (2002) 7475
19. Zhang L., Chen K., Huang X., Wang L., Xu J., and Li W. Appl. Phys., A 77 (2003) 485
20. Park N.M., Choi C.J., Seong T.Y., and Park S.J. Phys. Rev. Lett. 86-7 (2001) 1355
21. Nishio K., Koga J., Yamaguchi T., and Yonezawa F. J. Non-Cryst. Solids 312-314 (2002) 323
22. Kim B.H., Cho C.H., Kim T.W., Park N.M., Sung G.Y., and Park S.J. Appl. Phys. Lett. 86 (2005) 091908