Capacitance-voltage study of SiO2/nanocrystalline silicon/SiO2 double-barrier structures

Thin Solid Films

Volumn 425, Issue 1-2, 2003, Pages 221-224

  Wu, Liangcai ^a   Huang, Xinfan ^a   Shi, Jianjun ^a   Dai, Min ^a   Qiao, Feng ^a   Li, Wei ^a   Xu, Jun ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Chemical vapor deposition; Electronic devices; Nanostructures; Silicon

Indexed keywords

CAPACITANCE; COULOMB BLOCKADE; ELECTRIC CHARGE; ELECTRIC POTENTIAL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHEMATIC DIAGRAMS; SEMICONDUCTOR QUANTUM DOTS; SILICA; THERMAL EFFECTS;

THERMAL ENERGY;

NANOSTRUCTURED MATERIALS;

EID: 0037415986     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01307-X     Document Type: Article

References (12)

1. Kubota T., Yokoyama S., Nakahama T., Mashiko S., Noguchi Y., Majiman Y., Iwamoto M. Thin Solid Films. 393:2001;379-382.
2. Nakajima A., Futatsugi T., Kosemura K., Fukano T., Yokoyama N. Appl. Phys. Lett. 70:1997;1742.
3. Gu X., Qin H., Lu H., Chen K., Huang X. J. Non-Cryst. Solids. 227-230:1998;1168.
4. Tiwari S., Rana F., Hanafi H., Hartstein A., Crabble E.F., Chan K. Appl. Phys. Lett. 68:1996;1377.
5. Ishikawa Y., Makita S., Zhang J.H., Tsuchiya T., Tabe M. Jpn. J. Appl. Phys. 38:1999;L789.
6. Ishikawa Y., Kosugi M., Kumezawa M., Tsuchiya T., Tabe M. Thin Solid Films. 369:2000;69.
7. Dons E.M., Skowronski C.S., Farmer K.R. Appl. Phys. Lett. 73:1998;3712.
8. Medeiros-Ribeiro G., Garcia J.M., Petroff P.M. Phys. Rev. B. 56:1997;3609.
9. Chen M.R., Chen K.J. Acta Phys. Sin. 3:1994;250.
10. Simmons J.G. J. Appl. Phys. 34:1963;1793.
11. Ashoori R.C., Stormer H.L., Weiner J.S., Pfeiffer L.N., Baldwin K.W., West K.W. Phys. Rev. Lett. 71:1993;613.
12. Medeiros-Ribeiro G., PiKus F.G., Petroff P.M., Efros A.L. Phys. Rev. B. 55:1997;1568.