Growth of high-density Si nanoparticles on Si 3N 4 and SiO 2 thin films by hot-wire chemical vapor deposition

Journal of Applied Physics

Volumn 92, Issue 8, 2002, Pages 4695-4698

  Zhu, Jianhong ^a   Leach, W Thomas ^a   Stanley, Scott K ^a   Ekerdt, John G ^a   Yan, Xiaoming ^b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; DISILANES; HIGH-DENSITY; HOT WIRE CHEMICAL VAPOR DEPOSITION; NANOPARTICLE DENSITY; SI ATOMS; SI NANOPARTICLES; THERMAL CHEMICAL VAPOR DEPOSITION; THERMAL CVD; TUNGSTEN FILAMENTS; TWO-STEP PROCEDURE;

COALESCENCE; DESORPTION; MONOLAYERS; NANOPARTICLES; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; THIN FILMS; TUNGSTEN; VAPORS; WIRE;

CHEMICAL VAPOR DEPOSITION;

EID: 18744361844     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509841     Document Type: Article

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