On dielectric breakdown in silicon-rich silicon nitride thin films

Applied Physics Letters

Volumn 94, Issue 1, 2009, Pages

  Habermehl, S ^a   Apodaca, R T ^a   Kaplar, R J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; IONIZATION; MOSFET DEVICES; NITRIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE;

BARRIER LOWERING; BREAKDOWN FIELDS; BULK TRAPS; CHARGE TRANSPORT MECHANISMS; CHARGE TRANSPORTS; COMPOSITIONAL DEPENDENCES; DIELECTRIC BREAKDOWNS; HOT ELECTRON GENERATIONS; SEMIEMPIRICAL; SILICON NITRIDE THIN FILMS; SILICON OXYNITRIDE; THRESHOLD FIELDS;

IONIZATION POTENTIAL;

EID: 58149504128     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3065477     Document Type: Article

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16. No literature values available for LPCVD a -Si.
17. Acceptor compensation =1 was assumed in Ref.. Herein, k1 and k2 were recalculated to account for compositional variation =1-1.3, adopted from Ref..
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