Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Physical Review Letters

Volumn 86, Issue 7, 2001, Pages 1355-1357

  Park, Nae Man ^a   Choi, Chel Jong ^a   Seong, Tae Yeon ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRODYNAMICS; LIGHT ABSORPTION; MECHANICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA CONFINEMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM THEORY; SEMICONDUCTOR GROWTH; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

AMORPHOUS SILICON QUANTUM DOTS; PHOTOLUMINESCENCE EMISSION; QUANTUM CONFINEMENT; QUANTUM CONFINEMENT EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 14344278734     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.1355     Document Type: Article

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