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Volumn 88, Issue 12, 2006, Pages
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Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3
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Author keywords
[No Author keywords available]
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Indexed keywords
DISSOCIATION;
NITROGEN COMPOUNDS;
PASSIVATION;
PHOTOLUMINESCENCE;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SILANES;
SILICON NITRIDE;
SURFACE PHENOMENA;
PRECURSORS;
QUANTUM CONFINEMENT EFFECT;
SILICON NITRIDE FILMS;
SILICON QUANTUM DOTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 33645512438
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2187434 Document Type: Article |
Times cited : (254)
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References (17)
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