Structural evolution of nanocrystalline silicon studied by high resolution transmission electron microscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 4, 2007, Pages 1458-1461

  Ponce, A ^a   Benami, A ^b   Santana, G ^b   Alonso, J C ^b   Aguilar Hernandez J ^c   Contreras Puente, G ^c   Ortiz, A ^b   Fandiflo, J ^a   Romeu, D ^a  

^a SCHOOL OF ENGINEERING AND SCIENCES   (Mexico)

^b INSTITUTO DE INVESTIGACIONES EN MATERIALES   (Mexico)

^c INSTITUTO POLITÉCNICO NACIONAL   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON NITRIDES; CHEMICAL VAPOUR DEPOSITION; COMPOUND SEMICONDUCTOR; EXPERT EVALUATION; NANO-CRYSTALLINE; REMOTE PLASMAS; SILICON SUBSTRATES; STRUCTURAL EVOLUTIONS;

AMORPHOUS FILMS; AMORPHOUS SILICON; ARSENIC COMPOUNDS; CHLORINE COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPES; HIGH RESOLUTION ELECTRON MICROSCOPY; LITHOGRAPHY; MATERIALS SCIENCE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; NITRIDES; NONMETALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON NITRIDE; TECHNOLOGY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 49549118043     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674104     Document Type: Conference Paper

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