Fabrication of silicon quantum dots in SiNx multilayer using hot-wire CVD

Journal of Crystal Growth

Volumn 311, Issue 9, 2009, Pages 2659-2663

  Panchal, A K ^a   Solanki, C S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

A1.Raman spectra; A1.SIMS; A1.TEM; A3.a Si SiNx multilayer; A3.HWCVD

Indexed keywords

A1.RAMAN SPECTRA; A1.SIMS; A1.TEM; A3.A-SI/SINX MULTILAYER; A3.HWCVD;

ANNEALING; CHEMICAL VAPOR DEPOSITION; MULTILAYERS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM DOTS; SILICON NITRIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; WIRE;

SILICON;

EID: 65349187670     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.03.013     Document Type: Article

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