Resonant tunnelling and storage of electrons in Si nanocrystals within a-SiNx/nc-Si/a-SiNx structures

Chinese Physics Letters

Volumn 25, Issue 3, 2008, Pages 1094-1097

  Wang, Xiang ^a   Huang, Jian ^a   Zhang, Xian Gao ^a   Ding, Hong Lin ^a   Yu, Lin Wei ^a   Huang, Xin Fan ^a   Li, Wei ^a   Xu, Jun ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RESONANT TUNNELING; SILICON;

DOUBLE BARRIERS; FREQUENCY-DEPENDENT CAPACITANCE; HYDROGEN DILUTED SILANE; NANOCRYSTALLINE SILICON (NC SI); P-TYPE SI; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; SANDWICHED STRUCTURE; SI LAYER; SI NANOCRYSTAL; SI SUBSTRATES;

CAPACITANCE;

EID: 41149116196     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/3/078     Document Type: Article

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