Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 743-747

  Beylier, G ^a,b   Bruyere S ^a   Benoit, D ^a   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; ELECTRIC CHARGE; ELECTRIC PROPERTIES; HYSTERESIS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS;

CONTAMINANT DIFFUSION BARRIERS; DIELECTRIC STACKS; ELECTRICAL ANALYSIS; NEGATIVE STATES;

SILICON NITRIDE;

EID: 34247096551     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.005     Document Type: Article

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