Morphological and optical properties of Si nanostructures imbedded in SiO2 and Si3N4 films grown by single source chemical vapor deposition

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7475-7480

  Torrison, L ^a   Tolle, J ^a   Smith, David J ^a   Poweleit, C ^a   Menendez, J ^a   Mitan, M M ^b   Alford, T L ^b   Kouvetakis, J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICA; SILICON NITRIDE; STOICHIOMETRY; ULTRAHIGH VACUUM;

QUANTUM CONFINEMENT;

NANOSTRUCTURED MATERIALS;

EID: 0037115597     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1525046     Document Type: Article

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