Properties of thin film silicon nitride deposited by hot wire chemical vapor deposition using silane, ammonia, and hydrogen gas mixtures

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2360-2367

  Mahan, A H ^a   Dillon, A C ^a   Gedvilas, L M ^a   Williamson, D L ^b   Perkins, J D ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; SILICON NITRIDE; X RAY DIFFRACTION;

HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

THIN FILMS;

EID: 0042825767     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1590053     Document Type: Article

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