Evidence of intrinsic silicon nanostructure formation in SiN matrix deposited by various low temperature CVD techniques

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 4, 2007, Pages 1401-1405

  Lelievre J F ^a   Rodriguez, H ^a   Fourmond, E ^a   Quoizola, S ^a   De La Torre, J ^a   Sibai, A ^a   Bremond, G ^a   Ribeyron, P J ^b   Loretz, J C ^c   Araujo, D ^d   Lemiti, M ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA GRENOBLE   (France)

^c Semco Engineering   (France)

^d UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS HYDROGENATED SILICON; COMPOUND SEMICONDUCTOR; EXPERT EVALUATION; LOW-TEMPERATURE CVD; SILICON NANO-STRUCTURES; SIN MATRIX;

AMORPHOUS MATERIALS; AMORPHOUS SILICON; ARSENIC COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CHLORINE COMPOUNDS; ELECTRIC CONDUCTIVITY; NANOSTRUCTURES; NITRIDES; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; TECHNOLOGY;

SEMICONDUCTOR MATERIALS;

EID: 49549113388     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674144     Document Type: Conference Paper

References (12)

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