The effects of annealing temperature on the photoluminescence from silicon nitride multilayer structures

Journal of Crystal Growth

Volumn 310, Issue 15, 2008, Pages 3680-3684

  Scardera, G ^a   Puzzer, T ^a   Perez Wurfl, I ^a   Conibeer, G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

A1. Nanocrystals; A1. Photoluminescence; A3. Chemical vapor deposition; A3. Thin film multilayers; B1. Silicon; B1. Silicon nitride

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; COMPOSITE FILMS; CUBIC BORON NITRIDE; LIGHT EMISSION; LUMINESCENCE; METALLIC MATRIX COMPOSITES; MULTILAYERS; NITRIDES; NONMETALS; PHOTOLUMINESCENCE; PLASMA DEPOSITION; SILICON; SILICON NITRIDE; STEEL ANALYSIS;

(100) SILICON; AMORPHOUS MATRICES; ANNEALING TEMPERATURE (TA); CHEMICAL VAPOUR DEPOSITION; MOLECULAR CHANGES; MULTI LAYER STRUCTURES; ROOM TEMPERATURE PHOTOLUMINESCENCE (RT-PL); SILICON NANOCRYSTALS (SI-NC);

AMORPHOUS SILICON;

EID: 46749106646     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.05.018     Document Type: Article

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