Using metal-insulator-semiconductor capacitor to investigate the charge accumulation in capacitive RF MEMS switches

3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS

Volumn , Issue , 2008, Pages 1048-1052

  San, Haisheng ^a   Chen, Xuyuan ^a,b   Xu, Peng ^a   Li, Gang ^a   Zhan, Linxian ^a  

^a XIAMEN UNIVERSITY   (China)

^b UNIVERSITY OF SOUTH EASTERN NORWAY   (Norway)

Author keywords

C V characteristics; Capacitive RF MEMS switch; Charge accumulation; MIS capacitor

Indexed keywords

ADMINISTRATIVE DATA PROCESSING; CAPACITANCE; CAPACITORS; COMPOSITE MICROMECHANICS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ELECTRIC SWITCHES; ENERGY STORAGE; MEMS; METAL INSULATOR BOUNDARIES; METALS; MICROELECTROMECHANICAL DEVICES; MIM DEVICES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; STRUCTURAL METALS; SWITCHING CIRCUITS;

ANALYTICAL MODELLING; C-V CHARACTERISTICS; CAPACITIVE RF MEMS SWITCH; CHARGE ACCUMULATION; CONSTANT VOLTAGE STRESS; DIELECTRIC CHARGING; DIELECTRIC LAYERS; INTERNATIONAL CONFERENCES; METAL-INSULATOR SEMICONDUCTORS; METAL-INSULATOR-METAL STRUCTURES; METAL-INSULATOR-SEMICONDUCTOR; MIS CAPACITOR; MIS CAPACITORS; MIS STRUCTURES; MOLECULAR SYSTEMS; PHYSICAL PROCESSES; RELIABILITY TESTING; RF-MEMS SWITCHES;

DIELECTRIC MATERIALS;

EID: 50249129354     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NEMS.2008.4484499     Document Type: Conference Paper

References (15)

1. J. J. Yao, "RF MEMS from a device perspective" J. Micromech. Microeng., vol. 10, pp. 9-38, 2000.
2. G. M. Rebeitz and J. B. Muldavin, "RF MEMS switches and switch circuits", IEEE Microw. Mag., vol. 2, No. 4, pp. 59-71, Dec. 2000.
3. J. R. Reid, R. T. Webster, L. A. Starman, "Noncontact Measurement of Charge Induced Voltage Shift in Capacitive MEM-Switches", IEEE Microw. Wirel. Compon. Lett., vol. 13, No. 9, pp. 367-369, 2003.
4. X. Yuan, S. Cherepko, J. Hwang, C. L. Goldsmith, C. Nordquist, and C. Dyck, "Initial Observation and Analysis of Dielectric-Charging Effects on RF MEMS Capacitive Switches" IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 1943-1946, Oct. 2004.
5. C. L. Goldsmith, J. Ehmke, A. Malczewski, B. Pillans, S. Eshelman, Z. Yao, et al. "Lifetime characterization of capacitive RF MEMS switches". IEEE MTT-S Int. Microwave Symp. Dig., vol. 1, pp. 227-230, 2001
6. S. T. Patton, J. S. Zabinski, "Effects of dielectric charging on fundamental forces and reliability in capacitive microelectromechanical systems radio frequency switch contacts", J. Appl. Phys., vol. 99, Issue 9, pp. 094910-11, 2006.
7. W. M. V. Spengen, R. Puers, R. Mertens and I. D. Wolf, "A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches", J. Micromech. Microeng., vol. 14, pp. 514-521, 2004.
8. W. Kem, D. A. Puotinen, "Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology". J. RCA Rev., vol. 31, pp. 187-196, 1970.
9. W. M. V. Spengen, R. Puers, and I. D. Wolf, "On the Physics of Stiction and its Impact on the Reliability of Microstructures", J. Adhes. Sci. Technol., vol. 17, No. 4, pp. 563-582, 2003.
10. S. M. Sze, Physics of Semiconductor Devices (Second edition), the Uited States of America: John Wiley Sons, Inc., 1981. Chap. 7.
11. C. H. Kim and Byungdoo Choe, "Interface Constraints in InP MIS Structurest", Chin. J. Phys., vol. 30, No. 5, pp. 785-796, 1992.
12. J. M. Shannon and B. A. Morgan, "Hole transport via dangling-bond states in amorphous hydrogenated silicon nitride", J. Appl. Phys., vol. 86, Issue 3, pp. 1548-155, 1999.
13. M. C. Hugon, F. Delmotte, B. Agius, and J. L. Courant, "Electrical properties of metal insulator semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance", J. Vac. Sci. Technol. A., vol. 15, pp. 3143-3153, 1997.
14. S. Le. Roy, P. Segur, G. Teyssedre and C. Laurent, "Description of bipolar charge transport in polyethylene using a fluid model with a constant mobility: model prediction", J. Phys. D: Appl. Phys., vol. 37, pp. 298-305, 2004.
15. D. Molinero, R. Comulada, and L. Castañer, "Dielectric charge measurements in capacitive microelectromechanical switchs", Appl. Phys. Lett., vol. 89, pp. 103506-3, 2006.