SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2122-2126

Electrical properties of silicon nitride films prepared by electron cyclotron resonance assisted sputter deposition

(2) Vargheese, K D a Rao, G M a

a INDIAN INSTITUTE OF SCIENCE (India)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; LEAKAGE CURRENTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; SPUTTER DEPOSITION; SUBSTRATES;

SILICON NITRIDE FILMS;

THIN FILMS;

EID: 0035441751 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1374631 Document Type: Article

Times cited : (16)

References (24)

1
- 0032024519
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 680
- Ma, T.P.¹

2
- 0001160548
- (1989) J. Appl. Phys. , vol.65 , pp. 3951
- Lustig, N.¹ Kanicki, J.²

3
- 0017956407
- (1978) J. Electrochem. Soc. , vol.125 , pp. 601
- Sinha, A.K.¹ Levinstein, H.J.² Smith, T.E.³ Quintana, G.⁴ Haszko, S.E.⁵

4
- 84975413925
- (1994) J. Electrochem. Soc. , vol.141 , pp. 2483
- Trolier-McKinstry, S.¹ Hu, H.² Carim, A.H.³

5
- 0029323656
- (1995) J. Appl. Phys. , vol.77 , pp. 6534
- Deshpande, S.V.¹ Gulari, E.² Brown, S.W.³ Rand, S.C.⁴

6
- 0030194036
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2674
- Park, D.G.¹ Tao, M.² Li, D.³ Botchkarev, A.E.⁴ Fan, Z.⁵ Wang, Z.⁶ Mohammad, S.N.⁷ Rockett, A.⁸ Abelson, J.R.⁹ Morkoc, H.¹⁰ Heyd, A.R.¹¹ Alterovitz, S.A.¹²

7
- 0001224373
- (1995) J. Vac. Sci. Technol. A , vol.13 , pp. 2900
- Sitbon, S.¹ Hugon, M.C.² Agius, B.³ Abel, F.⁴ Courant, J.L.⁵ Puech, M.⁶

8
- 0000571734
- (1998) J. Appl. Phys. , vol.83 , pp. 3865
- Maeda, M.¹ Ikeda, K.²

9
- 0000735508
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 2612
- Doughty, C.¹ Knick, D.C.² Bailey, J.B.³ Spencer, J.E.⁴

10
- 0032370425
- (1998) J. Vac. Sci. Technol. A , vol.16 , pp. 2931
- Landheer, D.¹ Rajesh, K.² Masson, D.³ Huise, J.E.⁴ Sproule, G.I.⁵ Quance, T.⁶

11
- 0001388985
- (1998) J. Appl. Phys. , vol.83 , pp. 5831
- Kim, J.H.¹ Chung, K.W.²

12
- 36449007810
- (1994) J. Appl. Phys. , vol.75 , pp. 8145
- Ray, S.K.¹ Das, S.² Maiti, C.K.³ Lahiri, S.K.⁴ Chakraborti, N.B.⁵

13
- 0001202449
- (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 589
- Lambrinos, M.F.¹ Valizadeh, R.² Colligon, J.S.³

14
- 85032299058
- (2000) Rev. Sci. Instrum. , vol.71 , pp. 467
- Vargheese, K.D.¹ Rao, G.M.²

15
- 0001614074
- (1984) Phys. Rev. B , vol.30 , pp. 1896
- Karcher, R.¹ Ley, L.² Johnson, R.L.³

16
- 0028514077
- (1994) J. Electron. Mater. , vol.23 , pp. 943
- Landheer, D.¹ Lu, Z.H.² Baribeau, J.M.³ Huang, L.J.⁴ Lau, W.M.⁵

17
- 0024753074
- (1989) Appl. Surf. Sci. , vol.39 , pp. 412
- Jousse, D.¹ Kanicki, J.² Stathis, J.H.³

18
- 0026838592
- (1992) J. Electrochem. Soc. , vol.139 , pp. 880
- Warren, W.L.¹ Kanicki, J.² Rong, F.C.³ Poindexter, E.H.⁴

19
- 0001188528
- (1962) Solid-State Electron. , vol.5 , pp. 285
- Terman, L.M.¹

20
- 0001408543
- (1968) Solid-State Electron. , vol.11 , pp. 135
- Lehovech, K.¹

21
- 0031271627
- (1997) J. Vac. Sci. Technol. A , vol.15 , pp. 3143
- Hugon, M.C.¹ Delmotte, F.² Agius, B.³

22
- 36849108306
- (1967) J. Appl. Phys. , vol.38 , pp. 2951
- Sze, S.M.¹

23
- 0001331579
- (1975) Appl. Phys. Lett. , vol.27 , pp. 256
- Yun, B.H.¹

24
- 0017905154
- (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 1074
- Arnett, P.C.¹ Weinberg, Z.A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.