Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Proceedings of the International Symposium on Electrical Insulating Materials

Volumn , Issue , 2001, Pages 148-151

  Sato, Hidefumi ^a   Kato, Hiromitsu ^a   Ohki, Yoshimichi ^a   Seol, Kwang Soo ^a   Noma, Takashi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; ELECTRIC INSULATING MATERIALS; ELECTRIC PROPERTIES; OPTICAL FIBERS; OPTICAL WAVEGUIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SOLAR CELLS; VLSI CIRCUITS;

CONDUCTION CURRENT; HYDROGENATED AMORPHOUS SILICON OXYNITRIDE; METAL-INSULATOR-SEMICONDUCTOR STRUCTURE; SILICON DANGLING BOND; SILICON OXYNITRIDE; THIN FILM ELECTRONIC DEVICES;

SILICON NITRIDE;

EID: 0035719199     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Parasitic channel induced by spin-on-glass in a double-level metallization complimentary metal oxide semiconductor process
2. Characterization and optimization of absorbing plasma-enhanced chemical vapor deposited antireflection coatings for silicon photovoltaics
3. 2O ambient
4. Low-loss fiber-matched low-temperature PECVD waveguides with small-core dimensions for optical communication systems
5. Electrical conduction in silicon nitrides deposited by plasma enhanced chemical vapour deposition
6. Oxidation of silicon nitride films in an oxygen plasma
7. 4-p-Si capacitor grown by low-pressure chemical vapor deposition
8. Photoluminescence analysis of plasma-deposited oxygen-rich silicon oxynitride films
9. Origin of photoluminescence around 2.6 - 2.9 eV in silicon oxynitride