SCOPUS 정보 검색 플랫폼

Volumn 62, Issue 12, 2000, Pages 8391-8396

Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfaces

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE; SILICON DIOXIDE;

ARTICLE; CRYSTALLIZATION; ENERGY; FILM; MELTING POINT; STOICHIOMETRY; TEMPERATURE; THICKNESS;

EID: 0034664594 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.8391 Document Type: Article

Times cited : (216)

References (13)

4
- 33744563346
- edited by B. Kramer (Vieweg, Braunschweig)
- (1999) Advances in Solid State Physics , pp. 131
- Zacharias, M.¹

9
- 33744578364
- edited by P. Fuoss, J. Tsao, D. W. Kisker, A. Zangwill, and T. F. Kuech, MRS Symposia Proceedings No. 312 (Materials Research Society, Pittsburgh)
- (1993) Common Themes and Mechanisms of Epitaxial Growth , pp. 145
- Baribeau, J.-M.¹ Lockwood, D.J.² Aers, G.C.³ Dharma-Wardana, M.W.C.⁴

12
- 0001270002
- edited by R. Vanselow and R. Howe (Springer, Berlin)
- (1988) Chemistry and Physics of Solid Surfaces , vol.7 , pp. 455
- Van der Veen, J.F.¹ Pluis, B.² Denier van der Gon, A.W.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.