Evolution with annealing treatments of the size of silicon nanocrystallites embedded in a SiNx matrix and correlation with optical properties

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 186-189

  Molinari, M ^a   Rinnert, H ^a   Vergnat, M ^a   Weisbecker, P ^b  

^a INSTITUT JEAN LAMOUR   (France)

^b UNIVERSITÉ DE LORRAINE   (France)

Author keywords

Amorphous silicon nitride alloys; Photoluminescence; Reactive evaporation; X ray diffraction

Indexed keywords

ANNEALING; EVAPORATION; OPTICAL PROPERTIES; PHOTOEMISSION; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICON; SPECTROMETRY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE EVAPORATION; SILICON NANOCRYSTALLITES;

NANOSTRUCTURED MATERIALS;

EID: 1642338720     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00715-8     Document Type: Conference Paper

References (7)

1. Molinari M., Rinnert H., Vergnat M. Appl. Phys. Lett. 77:2000;3499.
2. Kärcher R., Ley L., Johnson R.L. Phys. Rev. B. 30:1984;1896.
3. Tsu D.V., Lucovsky G., Mantini N.J. Phys. Rev. B. 33:1986;7069.
4. Tauc J., Grigorovici R., Vancu A. Phys. Stat. Sol. 15:1966;627.
5. Zi J., Büscher H., Falter C., Ludwig W., Zhang K., Xie X. Appl. Phys. Lett. 69:1996;200.
6. Volodin V.A., Efremov M.D., Gritsenko V.A., Kochubei S.A. Appl. Phys. Lett. 73:1998;1212.
7. Rinnert H., Vergnat M., Marchal G., Burneau A. Appl. Phys. Lett. 72:1998;3157.