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Journal of Applied Physics

Volumn 107, Issue 4, 2010, Pages

High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

(5) Koblmuller, G a,b Chu, R M a Raman, A a Mishra, U K a Speck, J S a

a University of California (United States)

b WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BUFFER LEAKAGE; C-DOPED; CBR; DEVICE STRUCTURES; DOPING STRATEGIES; FLUX RATIO; GAN BUFFER LAYERS; GAN TEMPLATE; GROWTH CONDITIONS; HIGH GROWTH TEMPERATURES; HIGH QUALITY; HIGH TEMPERATURE; IMPURITY LEVEL; IN-SITU; INTERFACE QUALITY; INTERFACIAL IMPURITIES; MOLECULAR BEAM EPITAXIAL GROWTH; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REGROWTH INTERFACES; RESIDUAL OXYGEN; ROOM TEMPERATURE; SEMI-INSULATING; SMOOTH SURFACE; THERMAL CLEANING; THERMAL DISSOCIATION;

CRYSTAL GROWTH; DISSOCIATION; DOPING (ADDITIVES); DRAIN CURRENT; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; IMPURITIES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR OXYGEN; PHASE INTERFACES; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE STRUCTURE; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

GALLIUM ALLOYS;

EID: 77749252515 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3285309 Document Type: Article

Times cited : (74)

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