Growth and Characterisation of High Electron Mobility Transistors on 4H-SiC by Ammonia Molecular Beam Epitaxy

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 271-274

  Webb, J ^a   Tang, Haipeng ^a   Bardwell, J A ^a   Rolfe, S ^a   Liu, Ying ^a   Lapointe, J ^a   Marshall, P ^a   Macelwee, T W ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942521172     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<271::AID-PSSA271>3.0.CO;2-T     Document Type: Article

References (9)

1. S. T. SHEPPARD, K. DOVERSPILE, M. LEONARD, W. L. PRIBBLE, S. T. ALLEN, and J. W. PALMOUR, Mater. Sci. Forum 338, 1643 (2000).
2. R. GASKA, J. W. YANG, A. OSINSKY, Q. CHEN, M. ASIF KHAN, A. ORLOV, G. L. SNIDER, and M. S. SHUR, Appl. Phys. Lett. 72, 707 (1998).
3. C. F. LIN, H. C. CHENG, G. C. CHI, M. S. FENG, J. D. GUO, J. MINGHUANG HONG, and C. Y. CHEN, J. Appl. Phys. 82, 2378 (1997).
4. QIZHEN XUE, Q. K. XUE, Y. HASEGAWA, I. S. TSONGAND, and T. SAKURAI, Appl. Phys. Lett. 74, 2468 (1999).
5. Z. Y. XIE, C. H. WEI, L. Y. LI, J. H. EDGAR, J. CHAUDHURI, and C. IGNATIEV, MRS Internet J. Nitride Semicond. Res. 4S1, G3.39 (1999).
6. Z. P. GUAN, A. L. CAI, H. PORTER, J. CABALU, S. HUANG, and R.E. GIEDD, Appl. Surf. Sci. 165, 203 (2000).
7. J. M. REDWING, M. A. TISCHLER, J. S. FLYNN, S. ELHAMRI, M. AHOUJJA, R. S. NEWROCK, and W. C. MITCHEL, Appl. Phys. Lett. 69, 963 (1996).
8. J. A. BARDWELL, I. FOULDS, B. LAMONTAGNE, H. TANG, J. B. WEBB, P. MARSHALL, S. J. ROLFE, J. STAPLEDON, and T. W. MACELWEE, J. Vac. Sci. Technol. A 18, 750 (2000).
9. J. B. WEBB, H. TANG, J. A. BARDWELL, and P. COLERIDGE, Appl. Phys. Lett. 78, 3845 (2001).