Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime

Applied Physics Express

Volumn 1, Issue 6, 2008, Pages 0611031-0611033

  Koblmüller, Gregor ^a   Chu, Rongming ^a   Wu, Feng ^a   Mishra, Umesh K ^a   Speck, James S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; DECOMPOSITION; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GROWTH (MATERIALS); HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHOTORESISTS; PYROLYSIS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE; SURFACE MORPHOLOGY;

ALGAN/GAN HETEROSTRUCTURES; DISLOCATION REDUCTIONS; DRAIN BIASES; GAN BUFFERS; GROWTH CHARACTERISTICS; GROWTH CONDITIONS; HETEROEPITAXIAL GROWTHS; HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES; HIGH GROWTH TEMPERATURES; HOMOEPITAXIAL; OUTPUT POWERS; POWER ADDED EFFICIENCIES; RICH CONDITIONS; SIC SUBSTRATES; THERMAL DECOMPOSITIONS; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 57649087239     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.061103     Document Type: Article

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