Carbon doping of GaN with CBr 4 in radio-frequency plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 95, Issue 12, 2004, Pages 8456-8462

  Green, D S ^a   Mishra, U K ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFERS; CARBON CONCENTRATION; CARBON DOPING; CARBON INCORPORATION; TRANSISTOR STRUCTURES; YELLOW LUMINESCENCE (YL);

ATOMIC FORCE MICROSCOPY; CARBON; FERMI LEVEL; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 3142567283     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1755431     Document Type: Article

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