Molecular beam epitaxy of GaN under N-rich conditions using NH3

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 618-621

  Grandjean, N ^a   Leroux, M ^a   Massies, J ^a   Mesrine, M ^a   Laugt, M ^a  

^a CNRS   (France)

Author keywords

GaN; MBE; NH3; PL; SIMS; V III ratio

Indexed keywords

EID: 0000814687     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.618     Document Type: Article

References (23)

1. S. Nakamura, M. Senoh, S.-I. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umcmoto, M. Sano and K. Chocho: Appl. Phys. Lett. 72 (1998) 211.
2. S. Nakamura and G. Fasol: The Blue Laser Diode (Springer, Berlin, 1997).
3. R. J. Molnar, R. Singh and T. D.Moustakas: Appl. Phys. Lett. 66 (1995) 268.
4. H. Tews, R. Averbeck, A. Graber and H. Riechcrt: Electron. Lett. 32 (1996) 2004.
5. N. Grandjean, J. Massics, M. Leroux and P. Lorenzini: Appl. Phys. Lett. 72(1998)82.
6. Ô. Aktas, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov and H. Morkoç: Electron. Lett. 31 (1995) 1389.
7. S. Yoshida, S. Misawa and S. Gonda: Appl. Phys. Lett. 42 (1983) 427.
8. R. J. Molnar and T. D. Moustakas: J. Appl. Phys. 76 (1994) 4587.
9. H. Riechert, R. Averbeck, A. Graber, M. Schienle, U. Strauss and H. Tews: Mater. Res. Soc. Symp. Proc. 449 (1997) 149.
10. E. J. Tarsa, B. Heyring, X. H. Wu, P. Fini: S. P. DenBaars and J. S. Speck: J. Appl. Phys. 82 (1997) 5472.
11. ) P. Hacke, G. Feuillet, H. Okumura and S. Yoshida: Appl. Phys. Lett. 69 (1996) 2507.
12. W. Kim, Ö. Aktas, A. E. Botcharev, A. Salvador, S. N. Mohammad and H:. Morkoç: J. Appl. Phys. 79 (1996) 7657.
13. R. Held, D. E. Grawford, A. M. Johnston, A. M. Dabiran and P. I. Cohen: J. Electron. Mater. 26 (1997) 272.
14. ULSI ammonia (< 1 ppm), Air Liquide, France.
15. N. Grandjean and J. Massies: Appl. Phys. Lett. 71 (1997) 1816.
16. M. Mesrine, N. Grandjean and J. Massics: Appl. Phys. Lett. 72 (1998) 350.
17. P. Vennéguès: private communication.
18. 2/V/s) probably due to compensation effects [C.-Y. Hwang et al: J. Electron. Mater. 26 (1997) 243]
19. -3, respectively.
20. M. Mayer, A. Pelzmann, M. Kamp, K. J. Ebeling, H. Teisseyre, G. Nowak, M. Leszczynski, I. Grzegory, S. Porowski and G. Karczewski: Jpn. J. Appl. Phys. 36 (1997) L1634.
21. N. Grandjean and J. Massics: Appl. Phys. Lett. 73 (1998) 1260.
22. N. Grandjean, M. Leroux, M. Laugt and J. Massies: Appl. Phys. Lett. 71 (1997) 240.
23. M. Kamp, M. Mayer, A. Pelzmann and K. J. Ebeling: Mater. Res. Soc. Symp. Proc. 449 (1997) 161.