AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Journal of Crystal Growth

Volumn 309, Issue 1, 2007, Pages 1-7

  Cordier, Y ^a   Azize, M ^a   Baron, N ^a,b   Chenot, S ^a   Tottereau, O ^a   Massies, J ^a  

^a CRHEA CNRS   (France)

^b Picogiga International   (France)

Author keywords

A1. Fe doping; A2. Metal organic vapour phase epitaxy; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. High electron mobility transistors

Indexed keywords

ELECTRON GAS; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; IRON; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTOR DOPING;

BUFFER LEAKAGE CURRENTS; GAN-ON-SAPPHIRE TEMPLATES; INTERFACE CONTAMINATION; TWO-DIMENSIONAL ELECTRON GAS;

NITRIDES;

EID: 35648962963     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.09.023     Document Type: Article

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