Review of recent developments in growth of AlGaN/GaN high-electron mobility transistors on 4H-SiC by plasma-assisted molecular beam epitaxy

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 906-912

  Corrion, Andrea ^a   Poblenz, Christiane ^a   Waltereit, Patrick ^a   Palacios, Tomas ^a   Rajan, Siddharth ^a   Mishra, Umesh K ^a   Speck, Jim S ^a  

^a University of California   (United States)

Author keywords

Gallium Nitride; HEMT; MBE; Microwave

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

BUFFER LEAKAGE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE); POWER ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33747876949     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.906     Document Type: Conference Paper

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