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Journal of Electronic Materials

Volumn 30, Issue 3, 2001, Pages 110-114

Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures

(6) Hsu, J W P a Manfra, M J a Lang, D V a Baldwin, K W a Pfeiffer, L N a Molnar, R J b

a LUCENT TECHNOLOGIES (United States)

b MASSACHUSETTS INSTITUTE OF TECHNOLOGY (United States)

Author keywords

AlGaN GaN heterostructures; Dislocations; Surface contact potential; Surface morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; STOICHIOMETRY; SURFACES; VAPOR PHASE EPITAXY;

ALUMINUM GALLIUM NITRIDE; HILLOCKS; HYDRIDE VAPOR PHASE EPITAXY; SCANNING FORCE MICROSCOPY; STOICHIOMETRIC GROWTH; SURFACE CONTACT POTENTIAL;

HETEROJUNCTIONS;

EID: 0035274829 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0002-6 Document Type: Article

Times cited : (18)

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