Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

Applied Physics Letters

Volumn 81, Issue 8, 2002, Pages 1456-1458

  Manfra, M J ^a   Weimann, N G ^a   Hsu, J W P ^a   Pfeiffer, L N ^a   West, K W ^a   Chu, S N G ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; GAN BUFFER; GAN BUFFER LAYERS; GROWTH METHOD; HIGH-DENSITY; MORPHOLOGY CONTROL; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SHEET CHARGE DENSITY; SHEET RESISTIVITY; THREADING DISLOCATION; TRANSPORT CHARACTERISTICS;

BUFFER LAYERS; ELECTRON GAS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAMS; MORPHOLOGY; SAPPHIRE; SILICON CARBIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956003090     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498867     Document Type: Article

References (9)

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