Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Haffouz, S ^a   Tang, H ^a   Rolfe, S ^a   Bardwell, J A ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; SILICON;

C-DOPED GAN LAYERS; ELECTRON GAS STRUCTURES; IONIZED METHANE; PINCH-OFF CHARACTERISTIC;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33745440744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2215600     Document Type: Article

References (10)

1. Y. Cordier, F. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, and S. L. Delage, Electron. Lett. 38, 91 (2002).
2. A. Dadgar, J. Blasting, A. Diez, A. Alam, M. Heuken, and A. Krost, Jpn. J. Appl. Phys., Part 2 39, L1183 (1999).
3. E. Feltin, B. Beaumont, M. Laugt, P. de Mierry, P. Vennegues, H. Lahreche, M. Leroux, and P. Gibart, Appl. Phys. Lett. 79, 3230 (2001).
4. H. Ishikawa, G.-Y. Zhao, N. Nakada, T. Egawa, T. Jimbo, and M. Umeno, Jpn. J. Appl. Phys., Part 2 38, L492 (1999).
5. Y. Cordier, M. Higues, F. Semond, F. Natali, P. Lorenzini, Z. Bougrioua, J. Massies, R. Frayssinet, B. Beaumont, P. Gibart, and J.-P. Faurie, J. Cryst. Growth 278, 383 (2005).
6. Semond, P. Lorenzini, N. Grandjean, and J. Massies, Appl. Phys. Lett. 78, 335 (2001).
7. J. B. Webb, H. Tang, S. Rolfe, and J. A. Bardwell, Appl. Phys. Lett. 75, 953 (1999).
8. J. B. Webb, H. Tang, J. A. Bardwell, S. Rolfe, Y. Liu, J. Lapointe, P. Marshall, and T. W. McElwee, Phys. Status Solidi A 188, 271 (2001).
9. P. R. Hageman, S. Haffouz, V. Kirilyuk, A. Grzegorcayk, and P. K. Larsen, Phys. Status Solidi A 188, 523 (2001).
10. S. Haffouz, H. Tang, J. A. Bardwell, R. M. Hsu, J. B. Webb, and S. Rolfe, Solid-State Electron. 49, 802 (2005).