Defect reduction in GaN epilayers and HFET structures grown on (0 0 0 1)sapphire by ammonia MBE

Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 584-589

  Webb, James B ^a   Tang, H ^a   Bardwell, J A ^a   Moisa, S ^a   Peters, C ^b   MacElwee, T ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

A1. Characterization; A1. Crystal morphology; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B3. High electron mobility transistor

Indexed keywords

AMMONIA; CARRIER CONCENTRATION; HALL EFFECT; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOCHEMICAL REACTIONS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EPILAYERS;

FIELD EFFECT TRANSISTORS;

EID: 0035451526     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01266-0     Document Type: Article

References (9)