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Volumn 85, Issue 22, 2004, Pages 5394-5396
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Electron mobility exceeding 160000 cm 2/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
COULOMB SCATTERING;
HYDRIDE VAPOR PHASE EPITAXY (HVPE);
METAL-INSULATOR TRANSITION;
SHEET DENSITY;
ALUMINUM COMPOUNDS;
CARRIER CONCENTRATION;
DENSITY (SPECIFIC GRAVITY);
DISLOCATIONS (CRYSTALS);
ELECTRON GAS;
ELECTRON MOBILITY;
GALLIUM NITRIDE;
MOLECULAR BEAM EPITAXY;
HETEROJUNCTIONS;
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EID: 11044224990
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1824176 Document Type: Article |
Times cited : (75)
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References (10)
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