메뉴 건너뛰기




Volumn 78, Issue 4, 2001, Pages 463-465

Chemical ordering in AlGaN alloys grown by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000657778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1341222     Document Type: Article
Times cited : (69)

References (14)
  • 1
    • 0003114331 scopus 로고    scopus 로고
    • Gallium Nitride (GaN) I
    • edited by J. I. Pankove and T. D. Moustakas Academic, New York
    • Gallium Nitride (GaN) I, in Semiconductors and Semimetals, edited by J. I. Pankove and T. D. Moustakas (Academic, New York, 1998), Vol. 50.
    • (1998) Semiconductors and Semimetals , vol.50
  • 2
    • 0000258939 scopus 로고    scopus 로고
    • Gallium Nitride (GaN) II
    • edited by J. I. Pankove and T. D. Moustakas Academic, New York
    • Gallium Nitride (GaN) II. in Semiconductors and Semimetals, edited by J. I. Pankove and T. D. Moustakas (Academic, New York, 1999), Vol. 57.
    • (1999) Semiconductors and Semimetals , vol.57
  • 3
    • 0041659571 scopus 로고    scopus 로고
    • Ref. 2, pp. 33-121
    • T. D. Moustakas, in Ref. 2, pp. 33-121.
    • Moustakas, T.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.