Comparison of plasma etch techniques for III-V nitrides

Solid-State Electronics

Volumn 42, Issue 12, 1998, Pages 2259-2267

  Shul, R J ^a   Vawter, G A ^a   Willison, C G ^a   Bridges, M M ^a   Lee, J W ^b   Pearton, S J ^b   Abernathy, C R ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON CYCLOTRON RESONANCE; MORPHOLOGY; PLASMA ETCHING; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR PLASMAS;

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA (ICP) ETCH SYSTEMS;

SEMICONDUCTING FILMS;

EID: 0032288444     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00223-8     Document Type: Article

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