Structural characterization of cubic and hexagonal GaN thin films grown by IBA-MBE on SiC/Si

Journal of Crystal Growth

Volumn 312, Issue 6, 2010, Pages 762-769

  Haberlen M ^a   Gerlach, J W ^b   Murphy, B ^c   Lindner, J K N ^a,d   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

^b LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^c SILTRONIC AG   (Germany)

^d UNIVERSITY OF PADERBORN   (Germany)

Author keywords

A3. Ion beam assisted growth; A3. Ion implantation; A3. Molecular beam epitaxy; B1. Gallium compounds; B1. Nitrides; B1. Silicon carbide

Indexed keywords

A3. ION BEAM ASSISTED GROWTH; A3. ION IMPLANTATION; A3. MOLECULAR BEAM EPITAXY; B1. GALLIUM COMPOUNDS; B1. NITRIDES; B1. SILICON CARBIDE;

BEAM PLASMA INTERACTIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL SYMMETRY; CRYSTALLINE MATERIALS; DEPOSITION; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE; SILICON WAFERS; SURFACE DEFECTS; SURFACE ROUGHNESS; THIN FILM DEVICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FILM GROWTH;

EID: 76449098902     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.12.048     Document Type: Article

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