Growth of hexagonal GaN thin films on Si(1 1 1) with cubic SiC buffer layers

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 183-188

  Boo, Jin Hyo ^a   Ustin, Scott A ^b   Ho, Wilson ^b  

^a Sungkyunkwan University   (South Korea)

^b Cornell University   (United States)

Author keywords

3C SiC buffer layer; Carbonization; h GaN film; Single source precursor; Supersonic jet epitaxy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBONIZATION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON CARBIDE; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; SUPERSONIC JET EPITAXY; X RAY PHI SCAN MEASUREMENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032092392     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00222-X     Document Type: Article

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