High-quality m-plane GaN thin films deposited on γ-LiAlO2 by ion-beam-assisted molecular-beam epitaxy

Applied Physics Letters

Volumn 88, Issue 1, 2006, Pages

  Gerlach, J W ^a   Hofmann, A ^a   Hoche T ^a   Frost, F ^a   Rauschenbach, B ^a   Benndorf, G ^b  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ATOMIC FORCE MICROSCOPY; DEPOSITION; ENERGY GAP; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; PHOTOLUMINESCENCE SPECTROSCOPY; STRUCTURAL PROPERTIES; TOPOGRAPHY;

THIN FILMS;

EID: 33645528036     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2159100     Document Type: Article

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