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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 44-54

Ion beam synthesis of buried SiC layers in silicon: Basic physical processes

(1) Lindner, Jörg K N a

a UNIVERSITY OF AUGSBURG (Germany)

Author keywords

Amorphization; Displacive precipitate dissolution; Ion beam synthesis; Nucleation; Precipitation; Silicon carbide

Indexed keywords

AMORPHIZATION; ANNEALING; CRYSTAL GROWTH; CRYSTAL LATTICES; EPITAXIAL GROWTH; INCLUSIONS; ION BEAMS; ION BOMBARDMENT; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; NUCLEATION; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SILICON CARBIDE; STOICHIOMETRY; SYNTHESIS (CHEMICAL);

DISPLACIVE PRECIPITATE DISSOLUTIONS; ION BEAM SYNTHESIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035338313 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(01)00504-3 Document Type: Conference Paper

Times cited : (45)

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