High-dose carbon implantations into silicon: Fundamental studies for new technological tricks

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 1, 2003, Pages 27-38

  Lindner, J K N ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTALLINE MATERIALS; INSULATING MATERIALS; INTERFACIAL ENERGY; MICROELECTROMECHANICAL DEVICES; PRECIPITATION (CHEMICAL); SILICON CARBIDE; THERMAL EFFECTS;

HIGH-DOSE CARBON IMPLANTATION; SILICON SELF-INTERSTITIALS;

ION IMPLANTATION;

EID: 0037532569     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-2062-8     Document Type: Article

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