Growth and characterization of cubic InxGa1- xN epilayers on two different types of substrate

Journal of Crystal Growth

Volumn 284, Issue 3-4, 2005, Pages 379-387

  Pacheco Salazar, D G ^a   Li, S F ^b   Cerdeira, F ^c   Meneses, E A ^c   Leite, J R ^a   Scolfaro, L M R ^a   As, D J ^b   Lischka, K ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF PADERBORN   (Germany)

^c UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

A1. Crystalline quality; A1. Raman scattering; A1. X ray diffraction

Indexed keywords

MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; STRESS ANALYSIS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; INGAN EPILAYERS; SIC SUBSTRATES;

INDIUM COMPOUNDS;

EID: 26044482681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.049     Document Type: Article

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