Ion beam synthesis of cubic-SiC layer on Si(111) substrate

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Maltez, R L ^a   De Oliveira, R M ^a   Dos Reis, R M S ^a   Boudinov, H ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; STOICHIOMETRY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS INCLUSIONS; CRYSTALLINE REGIONS; LAMINAR SHAPE; NANOMETRIC TWINS;

SILICON CARBIDE;

EID: 33749335309     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2344813     Document Type: Article

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